Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots
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منابع مشابه
In uence of Annealing on the Optical and Electrical Properties of Multilayered InAs/GaAs Quantum Dots
The characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements, Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500oC causes the sharpness of the SAQDs inter...
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In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...
متن کاملWavelength and polarization variations of InAs/GaAs quantum dots emission at liquid Helium temperature via microphotoluminescence spectroscopy
In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...
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The effects of growth interruption (GI) on self-assembled InAs/GaAs quantum dot (QD) heterostructures have been presented. Samples with different GI times were grown on GaAs substrate by metal-organic chemical vapour epitaxy. Photoreflectance and temperature dependent photoluminescence (PL) spectra from the samples were measured. It is found that increasing GI time during InAs QDs formation ind...
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تاریخ انتشار 2012